PART |
Description |
Maker |
LET9085 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY RF POWER TRANSISTORS Ldmos Enhanced Technology
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
LET20030C |
RF POWER TRANSISTORS Ldmos Enhanced Technology RF功率晶体管LDMOS的增强技
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
LET9060S |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
|
STMICROELECTRONICS[STMicroelectronics]
|
LET21004 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
|
STMICROELECTRONICS[STMicroelectronics]
|
BLA1011-300 LA1011-300 |
Avionics LDMOS transistors Avionics LDMOS transistor BLA1011-300<SOT957A (LDMOST)|<<http://www.nxp.com/packages/SOT957A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola) MOTOROLA[Motorola, Inc]
|
BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. UHF power LDMOS transistor
|
NXP Semiconductors N.V.
|